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Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K

Appl. Phys. Lett. 93, 123502 (2008); doi:10.1063/1.2978330

Published 22 September 2008

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Binh-Minh Nguyen, Darin Hoffman, Edward Kwei-wei Huang, Pierre-Yves Delaunay, and Manijeh Razeghi
Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA
The utilization of the P+-pi-M-N+ photodiode architecture in conjunction with a thick active region can significantly improve long wavelength infrared type-II InAs/GaSb superlattice photodiodes. By studying the effect of the depletion region placement on the quantum efficiency in a thick structure, we achieved a topside illuminated quantum efficiency of 50% for an N-on-P diode at 8.0  µm at 77 K. Both the double heterostructure design and the application of polyimide passivation greatly reduce the surface leakage, giving an R0A of 416  Omega cm2 for a 1% cutoff wavelength of 10.52  µm, a Shot–Johnson detectivity of 8.1×1011  cmsqrt(Hz)/W at 77 K, and a background limited operating temperature of 110 K with 300 K background. ©2008 American Institute of Physics
History: Received 17 July 2008; accepted 16 August 2008; published 22 September 2008
Permalink: http://link.aip.org/link/?APPLAB/93/123502/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Dw
    Photodiodes; phototransistors; photoresistors
  • YEAR: 2008

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (26)
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