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Different optical absorption edges in AlN bulk crystals grown in m- and c-orientations

Appl. Phys. Lett. 93, 131922 (2008); doi:10.1063/1.2996413

Published 3 October 2008

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P. Lu,1 R. Collazo,1 R. F. Dalmau,2 G. Durkaya,3 N. Dietz,3 and Z. Sitar1
1Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919, USA
2HexaTech, Inc., 991 Aviation Pkwy., Suite 800, Morrisville, North Carolina 27560, USA
3Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
AlN single crystals were grown on m-plane (10[overline 1]0) and c-plane (000[overline 1]) AlN seeds under identical growth conditions. The m-plane AlN crystals exhibited substantially lower oxygen incorporation, ~1018  cm−3, than the c-plane crystals, ~1019  cm−3. By investigating optical transmission spectra, m-plane AlN had absorption bands at 4.05 and 4.35  eV, while c-plane AlN had an absorption band edge at 4.85  eV. These below bandgap absorption bands strongly correlate with the reported transitions related to Al vacancy-impurity complexes, such as the complex of an Al vacancy and two oxygen atoms, (VAl–2ON)1− and the complex of an Al vacancy and one oxygen atom, (VAl–ON)2−, becoming the major cause for the poor, below bandgap optical transparency (alpha>200  cm−1) of these crystals. ©2008 American Institute of Physics
History: Received 4 September 2008; accepted 17 September 2008; published 3 October 2008
Permalink: http://link.aip.org/link/?APPLAB/93/131922/1
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KEYWORDS and PACS

Keywords
PACS
  • 61.50.-f
    Structure of bulk crystals
  • 71.20.Nr
    Electronic structure of crystalline semiconductor compounds
  • 78.30.Fs
    Infrared and Raman spectra in III-V and II-VI semiconductors
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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