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Phase separation and optical properties in oxygen-rich InN films
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Gated armchair nanotube and metallic field effect

Appl. Phys. Lett. 93, 142102 (2008); doi:10.1063/1.2998394

Published 7 October 2008

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Wei Ren,1 T. H. Cho,2 T. C. Leung,2 and C. T. Chan1
1Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China
2Department of Physics, National Chung Cheng University, Chia-Yi, Taiwan
We propose a useful metallic field effect element based on the electric field control of armchair single-wall carbon nanotube. The electron conduction channels are enhanced by imposing a transverse gate voltage. Multiple Dirac points have been revealed theoretically by our density functional and tight binding calculations. Our electron transport results show that the performance of such unique transistors depends mainly on the diameter of nanotube exploited. The critical field strength required decreases rapidly with the tube diameter. ©2008 American Institute of Physics
History: Received 4 August 2008; accepted 16 September 2008; published 7 October 2008
Permalink: http://link.aip.org/link/?APPLAB/93/142102/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • 85.35.Kt
    Nanotube devices
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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