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Effect of ferroelastic twin walls on local polarization switching: Phase-field modeling

Appl. Phys. Lett. 93, 162901 (2008); doi:10.1063/1.2993330

Published 21 October 2008

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S. Choudhury,1 J. X. Zhang,1 Y. L. Li,1 L. Q. Chen,1 Q. X. Jia,2 and S. V. Kalinin3
1Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802, USA
2MPA-STC, MS K763, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
3The Center for Nanophase Materials Sciences and Materials Sciences and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
Local polarization switching in epitaxial ferroelectric thin films in the presence of ferroelastic domain walls was studied using phase-field approach. The nucleation bias profile across a twin wall was analyzed, and the localization of preferential nucleation sites was established. This analysis was further extended to a realistic domain structure with multiple twin boundaries. It was observed that the local nucleation voltage required for a 180° domain switching is closely related to the number of such local defects. ©2008 American Institute of Physics
History: Received 26 February 2008; accepted 10 September 2008; published 21 October 2008
Permalink: http://link.aip.org/link/?APPLAB/93/162901/1
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KEYWORDS and PACS

Keywords
PACS
  • 77.80.Dj
    Ferroelectric domain structure; hysteresis
  • 77.80.Fm
    Ferroelectric switching phenomena
  • 77.22.Ej
    Dielectric polarization and depolarization
  • 77.55.+f
    Dielectric thin films
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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