Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction
Closely packed ZnO nanowire array was fabricated on a n-type Si (100) substrate by a magnetron cosputtering method. The ZnO nanowire/n-Si heterojunction showed good diode characteristics with rectific...
Closely packed ZnO nanowire array was fabricated on a n-type Si (100) substrate by a magnetron cosputtering method. The ZnO nanowire/n-Si heterojunction showed good diode characteristics with rectific...
Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors
Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distort...
Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distort...
Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes
Appl. Phys. Lett. 93, 163502 (2008); doi:10.1063/1.3005196
Published 20 October 2008
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We present theoretically and experimentally the effect of the band discontinuity in type II misaligned InAs/GaSb superlattice heterodiodes. Calculations using the empirical tight binding method have shown the great flexibility in tuning the energy levels of the band edge in M-structure superlattice as compared to the standard InAs/GaSb superlattice. Through the experimental realization of several p-
-M-n photodiodes, the band discontinuity alignment between the standard binary-binary superlattice and the M-structured superlattice was investigated via optical characterization. The agreement between the theoretical predictions and the experimental measurement confirms the capability of controlling the M-structure band edges and suggests a way to exploit this advantage for the realization of heterostructures containing an M-structured superlattice without bias dependent operation.
©2008 American Institute of Physics
-M-n photodiodes, the band discontinuity alignment between the standard binary-binary superlattice and the M-structured superlattice was investigated via optical characterization. The agreement between the theoretical predictions and the experimental measurement confirms the capability of controlling the M-structure band edges and suggests a way to exploit this advantage for the realization of heterostructures containing an M-structured superlattice without bias dependent operation.
©2008 American Institute of Physics
| History: | Received 10 June 2008; accepted 30 September 2008; published 20 October 2008 |
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http://link.aip.org/link/?APPLAB/93/163502/1 |
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0003-6951 (print)
1077-3118 (online)
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