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Atomic layer structure of manganese atoms on wurtzite gallium nitride (000[overline 1])

Appl. Phys. Lett. 93, 181908 (2008); doi:10.1063/1.3006434

Published 5 November 2008

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Abhijit Chinchore, Kangkang Wang, Wenzhi Lin, Jeongihm Pak, and Arthur R. Smith
Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701, USA
Submonolayer quantities of Mn are deposited on wurtzite GaN (000[overline 1]). The surface is monitored using reflection high energy electron diffraction, which shows a pattern consisting of 3× reconstruction along [10[overline 1]0], but only 1× along [11[overline 2]0]. Diffraction analysis shows that the 3× streak intensity is maximized at [approximate]0.86 monolayer of Mn deposition. The results indicate that Mn forms linear chains along the [10[overline 1]0] direction with a spacing of sqrt(3)a/2 along chains and 3a/2 between chains. Correcting the peak coverage for sticking coefficient and accounting for the observed periodicities, a sqrt(3)×sqrt(3)-R30° model, consisting of 2/3 monolayer of Mn atoms, is proposed. ©2008 American Institute of Physics
History: Received 26 July 2008; accepted 6 October 2008; published 5 November 2008
Permalink: http://link.aip.org/link/?APPLAB/93/181908/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.-a
    Thin film structure and morphology
  • 68.35.bd
    Surface structure of metals and alloys
  • 68.47.Fg
    Semiconductor surfaces
  • YEAR: 2008

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ISSN:
0003-6951 (print)   1077-3118 (online)
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