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Write-erase and read paper memory transistor

Appl. Phys. Lett. 93, 203501 (2008); doi:10.1063/1.3030873

Published 17 November 2008

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Rodrigo Martins, Pedro Barquinha, Luís Pereira, Nuno Correia, Gonçalo Gonçalves, Isabel Ferreira, and Elvira Fortunato
Department of Materials Science, CENIMAT/I3N, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal
We report the architecture and the performances of a memory based on a single field-effect transistor built on paper able to write-erase and read. The device is composed of natural multilayer cellulose fibers that simultaneously act as structural support and gate dielectric; active and passive multicomponent amorphous oxides that work as the channel and gate electrode layers, respectively, complemented by the use of patterned metal layers as source/drain electrodes. The devices exhibit a large counterclockwise hysteresis associated with the memory effect, with a turn-on voltage shift between 1 and −14.5  V, on/off ratio and saturation mobilities of about 104 and 40  cm2  V−1  s−1, respectively, and estimated charge retention times above 14  000  h. ©2008 American Institute of Physics
History: Received 4 September 2008; accepted 30 October 2008; published 17 November 2008
Permalink: http://link.aip.org/link/?APPLAB/93/203501/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • YEAR: 2008

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (15)

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