Write-erase and read paper memory transistor
Appl. Phys. Lett. 93, 203501 (2008); doi:10.1063/1.3030873
Published 17 November 2008
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We report the architecture and the performances of a memory based on a single field-effect transistor built on paper able to write-erase and read. The device is composed of natural multilayer cellulose fibers that simultaneously act as structural support and gate dielectric; active and passive multicomponent amorphous oxides that work as the channel and gate electrode layers, respectively, complemented by the use of patterned metal layers as source/drain electrodes. The devices exhibit a large counterclockwise hysteresis associated with the memory effect, with a turn-on voltage shift between 1 and −14.5 V, on/off ratio and saturation mobilities of about 104 and 40 cm2 V−1 s−1, respectively, and estimated charge retention times above 14 000 h.
©2008 American Institute of Physics
| History: | Received 4 September 2008; accepted 30 October 2008; published 17 November 2008 |
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http://link.aip.org/link/?APPLAB/93/203501/1 |
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