High quantum efficiency back-illuminated GaN avalanche photodiodes
Appl. Phys. Lett. 93, 211107 (2008); doi:10.1063/1.3039061
Published 26 November 2008
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Back-illuminated avalanche photodiodes (APDs) composed of heterojunctions of either p-GaN/i-GaN/n-AlGaN or p-GaN/i-GaN/n-GaN/n-AlGaN were fabricated on AlN templates. At low voltage, an external quantum efficiency of 57% at 352 nm with a bandpass response was achieved by using AlGaN in the n-layer. Dependency of gain and leakage current on mesa area for these heterojunction APDs were studied. Back-illumination via different wavelength sources was used to demonstrate the advantages of hole-initiated multiplication in GaN APDs.
©2008 American Institute of Physics
| History: | Received 10 October 2008; accepted 7 November 2008; published 26 November 2008 |
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REFERENCES (14)
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- E. Monroy, F. Omnes, and F. Calle,
Semicond. Sci. Technol. 18, R33 (2003) . - J. C. Campbell, S. Demiguel, F. Ma, A. Beck, X. Guo, S. Wang, X. Zheng, X. Li, J. D. Beck, M. A. Kinch, A. Huntington, L. A. Coldren, J. Decobert, and N. Tscherptner,
IEEE J. Sel. Top. Quantum Electron. 10, 777 (2004) . - D. Walker, X. Zhang, A. Saxler, P. Kung, J. Xu, and M. Razeghi,
Proc. SPIE 2999, 267 (1997) . - K. Minder, J. L. Pau, R. McClintock, P. Kung, C. Bayram, M. Razeghi, and D. Silversmith, Appl. Phys. Lett. 91, 073513 (2007).
- J. L. Pau, R. McClintock, K. Minder, C. Bayram, P. Kung, M. Razeghi, E. Munoz, and D. Silversmith, Appl. Phys. Lett. 91, 041104 (2007).
- W. Yang, T. Nohova, S. Krishnankutty, R. Torreano, S. McPherson, and H. Marsh, Appl. Phys. Lett. 73, 1086 (1998).
- A. Krost, J. Blasing, F. Schulze, O. Schon, A. Alam, and M. Heuken,
J. Cryst. Growth 221, 251 (2000) . - R. McClintock, A. Yasan, K. Minder, P. Kung, and M. Razeghi, Appl. Phys. Lett. 87, 241123 (2005).
- P. Kung, A. Yasan, R. McClintock, S. R. Darvish, K. Mi, and M. Razeghi,
Proc. SPIE 4650, 199 (2002) . - T. M. Al tahtamouni, A. Sedhain, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 92, 092105 (2008).
- C. Bayram, J. L. Pau, R. McClintock, and M. Razeghi, J. Appl. Phys. 104, 083512 (2008).
- C. Bayram, J. L. Pau, R. McClintock, and M. Razeghi, Appl. Phys. Lett. 92, 241103 (2008).
- R. McClintock, K. Mayes, A. Yasan, D. Shiell, P. Kung, and M. Razeghi, Appl. Phys. Lett. 86, 011117 (2005).
- G. E. Stillman and C. M. Wolfe, in Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1977), Vol. 12.







