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High quantum efficiency back-illuminated GaN avalanche photodiodes

Appl. Phys. Lett. 93, 211107 (2008); doi:10.1063/1.3039061

Published 26 November 2008

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C. Bayram,1 J. L. Pau,1 R. McClintock,1 M. Razeghi,1 M. P. Ulmer,2 and D. Silversmith3
1Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA
2Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, USA
3Air Force Office of Scientific Research, Arlington, Virginia 22203, USA

Back-illuminated avalanche photodiodes (APDs) composed of heterojunctions of either p-GaN/i-GaN/n-AlGaN or p-GaN/i-GaN/n-GaN/n-AlGaN were fabricated on AlN templates. At low voltage, an external quantum efficiency of 57% at 352 nm with a bandpass response was achieved by using AlGaN in the n-layer. Dependency of gain and leakage current on mesa area for these heterojunction APDs were studied. Back-illumination via different wavelength sources was used to demonstrate the advantages of hole-initiated multiplication in GaN APDs. ©2008 American Institute of Physics
History: Received 10 October 2008; accepted 7 November 2008; published 26 November 2008
Permalink: http://link.aip.org/link/?APPLAB/93/211107/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Dw
    Photodiodes; phototransistors; photoresistors
  • YEAR: 2008

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0003-6951 (print)   1077-3118 (online)
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