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High-quality quantum point contact in two-dimensional GaAs (311)A hole system

Appl. Phys. Lett. 93, 212101 (2008); doi:10.1063/1.3036011

Published 24 November 2008

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J. Shabani,1 J. R. Petta,2 and M. Shayegan1
1Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
2Department of Physics, Princeton University, Princeton, New Jersey 08854, USA
We studied ballistic transport across a quantum point contact (QPC) defined in a high-quality GaAs (311)A two-dimensional hole system using shallow etching and top gating. The QPC conductance exhibits up to 11 quantized plateaus. The ballistic one-dimensional subbands are tuned by changing the lateral confinement and the Fermi energy of the holes in the QPC. We demonstrate that the positions of the plateaus (in gate voltage), the source-drain data, and the negative magnetoresistance data can be understood in a simple model that takes into account the variation, with gate bias, of the hole density and the width of the QPC conducting channel. ©2008 American Institute of Physics
History: Received 28 September 2008; accepted 5 November 2008; published 24 November 2008
Permalink: http://link.aip.org/link/?APPLAB/93/212101/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.23.Ad
    Ballistic transport (mesoscopic systems)
  • 73.50.Fq
    High-field and nonlinear effects in thin film electronic transport
  • 73.50.Jt
    Galvanomagnetic and other magnetotransport effects in thin films
  • 73.61.Ey
    Electrical properties of III-V semiconductors (thin films)
  • 73.21.-b
    Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
  • 73.63.-b
    Electronic transport in nanoscale materials and structures
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (19)
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