Twisted liquid crystal pi cell stabilized by polymer-sustained alignment
A uniform -twist liquid crystal (LC) alignment was stabilized in a pi cell by photopolymerization of a minute amount of monomers without using any chiral material. Controlling UV exposure time can var...
A uniform -twist liquid crystal (LC) alignment was stabilized in a pi cell by photopolymerization of a minute amount of monomers without using any chiral material. Controlling UV exposure time can var...
Demonstration of enhanced absorption in thin film Si solar cells with textured photonic crystal back reflector
Herein the authors report the experimental application of a powerful light trapping scheme, the textured photonic crystal (TPC) backside reflector, to thin film Si solar cells. TPC combines a one-dime...
Herein the authors report the experimental application of a powerful light trapping scheme, the textured photonic crystal (TPC) backside reflector, to thin film Si solar cells. TPC combines a one-dime...
GaN nanostructured p-i-n photodiodes
Appl. Phys. Lett. 93, 221104 (2008); doi:10.1063/1.3041641
Published 1 December 2008
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We report the fabrication of nanostructured p-i-n photodiodes based on GaN. Each device comprises arrays of ~200 nm diameter and 520 nm tall nanopillars on a 1 µm period, fabricated by e-beam lithography. Strong rectifying behavior was obtained with an average reverse current per nanopillar of 5 fA at −5 V. In contrast to conventional GaN diodes, nanostructured devices reproducibly show ideality factors lower than 2. Enhanced tunneling through sidewall surface states is proposed as the responsible mechanism for this behavior. Under backillumination, the quantum efficiency in nanostructured devices is partly limited by the collection efficiency of holes into the nanopillars.
©2008 American Institute of Physics
| History: | Received 10 October 2008; accepted 13 November 2008; published 1 December 2008 |
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http://link.aip.org/link/?APPLAB/93/221104/1 |
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0003-6951 (print)
1077-3118 (online)
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