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Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

Appl. Phys. Lett. 93, 223505 (2008); doi:10.1063/1.3041643

Published 3 December 2008

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Jung Won Seo, Jae-Woo Park, Keong Su Lim, Ji-Hwan Yang, and Sang Jung Kang
School of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Republic of Korea
This report covers the fabrication of a fully transparent resistive random access memory (TRRAM) device based on an ITO (indium tin oxide)/ZnO/ITO capacitor structure and its resistive switching characteristics. The fabricated TRRAM has a transmittance of 81% (including the substrate) in the visible region and an excellent switching behavior under 3  V. The retention measurement suggests that the memory property of the TRRAM device could be maintained for more than 10  years. We believe that the TRRAM device presented in this work could be a milestone of future see-through electronic devices. ©2008 American Institute of Physics
History: Received 27 October 2008; accepted 12 November 2008; published 3 December 2008
Permalink: http://link.aip.org/link/?APPLAB/93/223505/1
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0003-6951 (print)   1077-3118 (online)
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