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The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge

Appl. Phys. Lett. 93, 233501 (2008); doi:10.1063/1.3040311

Published 9 December 2008

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Monica Sawkar-Mathur,1 Ya-Chuan Perng,1 Jun Lu,2 Hans-Olof Blom,2 John Bargar,3 and Jane P. Chang1
1Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, California 90095, USA
2Ångstrom Laboratory, Uppsala University, SE-75121 Uppsala, Sweden
3Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
Hafnium aluminate thin films were synthesized by atomic layer deposition (ALD) to assess the effect of aluminum oxide incorporation on the dielectric/Ge interfacial properties. In these HfxAlyOz thin films, the Hf to Al cation ratio was effectively controlled by changing the ratio of hafnium oxide to aluminum oxide ALD cycles, while their short range order was changed upon increasing aluminum oxide incorporation, as observed by extended x-ray absorption fine structure analysis. The incorporation of aluminum oxide was shown to improve the electrical characteristics of hafnium oxide/Ge devices, including lower interface state densities and leakage current densities. ©2008 American Institute of Physics
History: Received 18 July 2008; accepted 10 November 2008; published 9 December 2008
Permalink: http://link.aip.org/link/?APPLAB/93/233501/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.40.Qv
    Electrical properties of metal-insulator-semiconductor structures
  • 77.55.+f
    Dielectric thin films
  • 81.05.Cy
    Elemental semiconductors: fabrication, treatment, testing and analysis
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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