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Substrate orientation dependence of ferromagnetism in (Ga,Mn)As

Appl. Phys. Lett. 93, 262502 (2008); doi:10.1063/1.3058758

Published 30 December 2008

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M. J. Wilson,1 G. Xiang,1 B. L. Sheu,1 P. Schiffer,1 N. Samarth,1 S. J. May,2 and A. Bhattacharya2
1Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
2Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
We describe a comprehensive study of the properties of both ordered and random alloy Ga1−xMnxAs grown on (001), (311), (201), and (110) GaAs substrates. Magnetization measurements show a systematic variation in the Curie temperature with epitaxial orientation in both types of samples, even for the same average Mn concentrations. Electrical characterization and thermal annealing of the random alloy Ga1−xMnxAs samples suggest that the density of As antisite defects depends on the growth surface, providing an extrinsic origin for the observed dependence of Curie temperature on substrate orientation. ©2008 American Institute of Physics
History: Received 27 October 2008; accepted 6 December 2008; published 30 December 2008
Permalink: http://link.aip.org/link/?APPLAB/93/262502/1
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KEYWORDS and PACS

Keywords
PACS
  • 75.50.Pp
    Magnetic semiconductors
  • 75.75.+a
    Magnetic properties of nanostructures
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
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REFERENCES (14)
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