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Ultrafast all-optical modulation in GaAs photonic crystal cavities

Appl. Phys. Lett. 94, 021111 (2009); doi:10.1063/1.3068755

Published 14 January 2009

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Chad Husko,1 Alfredo De Rossi,1 Sylvain Combrié,1 Quynh Vy Tran,1 Fabrice Raineri,2 and Chee Wei Wong3
1Thales Research and Technology, Route Départementale 128, 91767 Palaiseau, France
2Laboratoire de Photonique et de Nanostructures (CNRS UPR 20), Route de Nozay, 91460 Marcoussis, France
3Optical Nanostructures Laboratory, Columbia University, New York, New York 10027 USA
We demonstrate all-optical modulation based on ultrafast optical carrier injection in a GaAs photonic crystal cavity using a degenerate pump-probe technique. The observations agree well with a coupled-mode model incorporating all relevant nonlinearities. The low switching energy (~120  fJ), small energy absorption (~10  fJ), fast on-off response (~15  ps), limited only by carrier lifetime, and a minimum 10 dB modulation depth suggest practical all-optical switching applications at high repetition rates. ©2009 American Institute of Physics
History: Received 4 November 2008; accepted 19 December 2008; published 14 January 2009
Permalink: http://link.aip.org/link/?APPLAB/94/021111/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.70.Qs
    Photonic bandgap materials
  • 42.65.Pc
    Optical bistability, multistability, and switching
  • 72.30.+q
    High-frequency effects; plasma effects in electronic transport
  • 72.20.Jv
    Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators)
  • 42.65.Re
    Ultrafast processes; optical pulse generation and pulse compression
  • 42.79.Hp
    Optical processors, correlators, and modulators
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (21)
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