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Valley degeneracies in (111) silicon quantum wells

Appl. Phys. Lett. 94, 042101 (2009); doi:10.1063/1.3068499

Published 26 January 2009

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Neerav Kharche,1 Seongmin Kim,1 Timothy B. Boykin,2 and Gerhard Klimeck3
1Birck Nanotechnology Center, Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana 47907-1285, USA
2Department of Electrical and Computer Engineering, University of Alabama at Huntsville, Huntsville, Alabama 35899, USA
3Birck Nanotechnology Center, Network for Computational Nanotechnology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109, USA
(111) silicon quantum wells have been studied extensively, yet no convincing explanation exists for the experimentally observed breaking of sixfold valley degeneracy into two- and fourfold degeneracies. Here, systematic sp3d5s* tight-binding and effective mass calculations are presented to show that a typical miscut modulates the energy levels, which leads to breaking of sixfold valley degeneracy into two lower and four raised valleys. An effective mass based valley-projection model is used to determine the directions of valley minima in tight-binding calculations of large supercells. Tight-binding calculations are in better agreement with experiments compared to effective mass calculations. ©2009 American Institute of Physics
History: Received 3 November 2008; accepted 18 December 2008; published 26 January 2009
Permalink: http://link.aip.org/link/?APPLAB/94/042101/1
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KEYWORDS and PACS

Keywords
PACS
  • 71.18.+y
    Fermi surface: calculations and measurements; effective mass, -g factor
  • 71.15.Ap
    Basis sets and related methodology (condensed matter electronic structure)
  • 73.21.Fg
    Quantum wells (electron states/collective excitations)
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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