Gate voltage dependence on hot carrier degradation at an elevated temperature in a device with ultrathin silicon oxynitride
The effects of hot carrier stress (HCS) at elevated temperature on a device with ultrathin silicon oxynitride have been investigated. It was shown that the degradation of the device was more significa...
The effects of hot carrier stress (HCS) at elevated temperature on a device with ultrathin silicon oxynitride have been investigated. It was shown that the degradation of the device was more significa...
Optical modeling of chalcopyrite-based tandems considering realistic layer properties
Previous models of chalcopyrite-based tandem solar cells have not taken into account the limited optical transmission of the top cell observed. We use a quantitative model derived from measured optica...
Previous models of chalcopyrite-based tandem solar cells have not taken into account the limited optical transmission of the top cell observed. We use a quantitative model derived from measured optica...
Surface leakage reduction in narrow band gap type-II antimonide-based superlattice photodiodes
Appl. Phys. Lett. 94, 053506 (2009); doi:10.1063/1.3078282
Published 3 February 2009
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Inductively coupled plasma (ICP) dry etching rendered structural and electrical enhancements on type-II antimonide-based superlattices compared to those delineated by electron cyclotron resonance (ECR) with a regenerative chemical wet etch. The surface resistivity of 4×105 
cm is evidence of the surface quality achieved with ICP etching and polyimide passivation. By only modifying the etching technique in the fabrication steps, the ICP-etched devices with a 9.3 µm cutoff wavelength revealed a diffusion-limited dark current density of 4.1×10−6 A/cm2 and a maximum differential resistance at zero bias in excess of 5300 cm2 at 77 K, which are an order of magnitude better in comparison to the ECR-etched devices.
©2009 American Institute of Physics
cm is evidence of the surface quality achieved with ICP etching and polyimide passivation. By only modifying the etching technique in the fabrication steps, the ICP-etched devices with a 9.3 µm cutoff wavelength revealed a diffusion-limited dark current density of 4.1×10−6 A/cm2 and a maximum differential resistance at zero bias in excess of 5300 cm2 at 77 K, which are an order of magnitude better in comparison to the ECR-etched devices.
©2009 American Institute of Physics
| History: | Received 18 December 2008; accepted 14 January 2009; published 3 February 2009 |
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