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Electrical properties of epitaxial SrTiO3 tunnel barriers on (001) Pt/SrTiO3 substrates

Appl. Phys. Lett. 94, 062903 (2009); doi:10.1063/1.3081110

Published 10 February 2009

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Junwoo Son, Joël Cagnon, and Susanne Stemmer
Materials Department, University of California, Santa Barbara, California 93106-5050, USA
Coherent, epitaxial Pt films with root-mean-square surface roughness values of less than one unit cell were grown on (001) SrTiO3 substrates by dc sputtering. These Pt films served as bottom electrodes for epitaxial SrTiO3 tunnel barriers grown by rf magnetron sputtering. The SrTiO3 barriers were free of pinholes and showed mean surface roughness values of less than one unit cell. Barriers with a thickness of 4.5 nm showed excellent insulating properties and nonlinear current-voltage characteristics. At high bias fields, a reproducible hysteresis and deviation from the ideal tunneling behavior were observed. ©2009 American Institute of Physics
History: Received 20 October 2008; accepted 22 January 2009; published 10 February 2009
Permalink: http://link.aip.org/link/?APPLAB/94/062903/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.61.At
    Electrical properties of metal and metallic alloys (thin films)
  • 68.37.-d
    Microscopy of surfaces, interfaces, and thin films
  • 81.15.Cd
    Deposition by sputtering
  • 73.40.Gk
    Tunneling (electronic transport)
  • 68.55.at
    Thin film nucleation and growth in other materials
  • YEAR: 2009

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0003-6951 (print)   1077-3118 (online)
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