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Surface morphology and electronic structure of bulk single crystal beta-Ga2O3(100)

Appl. Phys. Lett. 94, 081906 (2009); doi:10.1063/1.3086392

Published 26 February 2009

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T. C. Lovejoy,1 E. N. Yitamben,1 N. Shamir,1 J. Morales,1 E. G. Villora,2 K. Shimamura,2 S. Zheng,3 F. S. Ohuchi,3 and M. A. Olmstead4
1Department of Physics, University of Washington, Seattle, Washington 98195, USA
2National Institute for Materials Science, Tsukuba, Japan
3Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, USA and Center for Nanotechnology (CNT), University of Washington, Seattle, Washington 98195, USA
4Department of Physics, University of Washington, Seattle, Washington 98195, USA and Center for Nanotechnology, University of Washington, Seattle, Washington 98195, USA
Experimental studies of the surface morphology and electronic structure of bulk single crystals of the transparent and wide gap semiconductor gallium oxide (beta-Ga2O3) have been conducted using scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and angle-resolved photoemission spectroscopy (ARPES). Atomically resolved STM and LEED results for the beta-Ga2O3(100) surface clarify that the predominant surface termination contains both gallium and oxygen, and this surface does not exhibit a reconstruction. The valence band structure was obtained with ARPES and shows good agreement with existing theoretical works at the zone center and along the a* and c* directions, except that the calculated bandwidth is ~7% too small. There is poorer agreement along the b* direction, where the experimental bands disperse more strongly than the calculations. ©2009 American Institute of Physics
History: Received 21 November 2008; accepted 2 February 2009; published 26 February 2009
Permalink: http://link.aip.org/link/?APPLAB/94/081906/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.35.bg
    Surface structure of semiconductors
  • 68.37.Ef
    Scanning tunneling microscopy of surfaces, interfaces and thin films
  • 68.47.Fg
    Semiconductor surfaces
  • 71.20.Nr
    Electronic structure of crystalline semiconductor compounds
  • 79.60.Bm
    Photoelectron spectra of clean metal, semiconductor, and insulator surfaces
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (18)
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