Gas detection using low-temperature reduced graphene oxide sheets
Appl. Phys. Lett. 94, 083111 (2009); doi:10.1063/1.3086896
Published 27 February 2009
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We demonstrate a high-performance gas sensor using partially reduced graphene oxide (GO) sheets obtained through low-temperature step annealing (300 °C at maximum) in argon flow at atmospheric pressure. The electrical conductance of GO was measured after each heating cycle to interpret the level of reduction. The thermally reduced GO showed p-type semiconducting behavior in ambient conditions and were responsive to low-concentration NO2 diluted in air at room temperature. The sensitivity is attributed to the electron transfer from the reduced GO to adsorbed NO2, which leads to enriched hole concentration and enhanced electrical conduction in the reduced GO sheet.
©2009 American Institute of Physics
| History: | Received 12 January 2009; accepted 2 February 2009; published 27 February 2009 |
| Permalink: |
http://link.aip.org/link/?APPLAB/94/083111/1 |
KEYWORDS and PACS
adsorption,
annealing,
charge exchange,
electric sensing devices,
gas sensors,
graphene,
hole density,
nitrogen compounds,
semiconductor materials
- 07.07.Df
Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing - 81.40.Ef
Cold working, work hardening and annealing - 68.43.Mn
Adsorption kinetics - 72.20.-i
Electrical conductivity phenomena in semiconductors and insulators - 72.80.Rj
Electrical conductivity of fullerenes and related materials - YEAR: 2009
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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