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Observation of back-surface reflected luminescence in GaAs excited by ultrashort pulses

Appl. Phys. Lett. 94, 102101 (2009); doi:10.1063/1.3093670

Published 9 March 2009

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X. M. Wen,1,2 T. A. Smith,2 K. P. Ghiggino,2 L. V. Dao,1 and P. Hannaford1
1Centre for Atom Optics and Ultrafast Spectroscopy, Swinburne University of Technology, Victoria 3122, Australia
2School of Chemistry, The University of Melbourne, VIC 3010, Australia
Multiple peaks observed in the temporal evolution of the luminescence of GaAs excited by an ultrashort pulse are attributed to the effect of back-surface reflection. The luminescence components originating from the direct emission and the back-surface reflection are well distinguished using up-conversion luminescence. At an appropriately high excitation energy a sharp peak in the luminescence evolution is observed in a self-assembled InGaAs/GaAs quantum dot sample, which is attributed to stimulated emission excited by the back-surface reflection. ©2009 American Institute of Physics
History: Received 21 December 2008; accepted 7 February 2009; published 9 March 2009
Permalink: http://link.aip.org/link/?APPLAB/94/102101/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.55.Cr
    Photoluminescence in III-V semiconductors
  • 78.67.Hc
    Optical properties of quantum dots
  • 78.45.+h
    Stimulated emission (condensed matter)
  • 73.21.La
    Quantum dots (electron states/collective excitations)
  • 78.47.jc
    Time-resolved spectroscopy in condensed matter
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (14)
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