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High magnetoresistance tunnel junctions with Mg–B–O barriers and Ni–Fe–B free electrodes

Appl. Phys. Lett. 94, 112504 (2009); doi:10.1063/1.3095595

Published 18 March 2009

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J. C. Read,1 Judy J. Cha,1 William F. Egelhoff, Jr.,2 H. W. Tseng,1 P. Y. Huang,1 Y. Li,1 David A. Muller,1 and R. A. Buhrman1
1School of Applied and Engineering Physics and Center for Materials Research, Cornell University, Ithaca, New York 14853, USA
2Magnetic Materials Group, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
The use of boron-alloyed electrodes with the radio frequency (rf) sputter deposition of MgO yields magnetic tunnel junctions (MTJs) with Mg–B–O tunnel barriers. After annealing, such MTJs can exhibit very high tunneling magnetoresistance (TMR) in the thin (~1.0  nm) barrier regime. Scanning tunneling spectroscopy of Mg–B–O layers reveals a better defined, but smaller band gap in comparison to that of thin MgO. We produced Fe60Co20B20/Mg–B–O/Ni65Fe15B20 MTJs where after a 350 °C annealing the Ni–Fe–B free electrode crystallizes into a highly textured (001)-normal body centered cubic (bcc) crystal structure and the MTJs achieve 155% TMR. ©2009 American Institute of Physics
History: Received 7 January 2009; accepted 16 February 2009; published 18 March 2009
Permalink: http://link.aip.org/link/?APPLAB/94/112504/1
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KEYWORDS and PACS

Keywords
PACS
  • 75.70.Cn
    Magnetic properties of interfaces
  • 75.47.Np
    Magnetotransport phenomena in metals and alloys
  • 61.66.Dk
    Crystal structure of specific alloys
  • YEAR: 2009

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ISSN:
0003-6951 (print)   1077-3118 (online)
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