Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
   
 
 
 
Previous Article
Perpendicular spin torque promotes synchronization of magnetic tunnel junction based spin torque oscillators
We study how the perpendicular spin transfer torque term (bj), present in magnetic tunneling junctions (MTJs), affects the synchronization of serially connected MTJ-based spin torque oscillators (MTJ-...
Next Article
High-rate reactive ion etching of barium hexaferrite films using optimal CHF3/SF6 gas mixtures
The high-rate reactive ion etching of c-axis oriented quasi-single-crystal barium hexaferrite (BaM) films, deposited on 6-H silicon carbide (0001) substrates, has been demonstrated. Arrays of BaM colu...

High magnetoresistance tunnel junctions with Mg–B–O barriers and Ni–Fe–B free electrodes

Appl. Phys. Lett. 94, 112504 (2009); doi:10.1063/1.3095595

Published 18 March 2009

You are not logged in to this journal. Log in

J. C. Read,1 Judy J. Cha,1 William F. Egelhoff, Jr.,2 H. W. Tseng,1 P. Y. Huang,1 Y. Li,1 David A. Muller,1 and R. A. Buhrman1
1School of Applied and Engineering Physics and Center for Materials Research, Cornell University, Ithaca, New York 14853, USA
2Magnetic Materials Group, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
The use of boron-alloyed electrodes with the radio frequency (rf) sputter deposition of MgO yields magnetic tunnel junctions (MTJs) with Mg–B–O tunnel barriers. After annealing, such MTJs can exhibit very high tunneling magnetoresistance (TMR) in the thin (~1.0  nm) barrier regime. Scanning tunneling spectroscopy of Mg–B–O layers reveals a better defined, but smaller band gap in comparison to that of thin MgO. We produced Fe60Co20B20/Mg–B–O/Ni65Fe15B20 MTJs where after a 350 °C annealing the Ni–Fe–B free electrode crystallizes into a highly textured (001)-normal body centered cubic (bcc) crystal structure and the MTJs achieve 155% TMR. ©2009 American Institute of Physics
History: Received 7 January 2009; accepted 16 February 2009; published 18 March 2009
Permalink: http://link.aip.org/link/?APPLAB/94/112504/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (304 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 75.70.Cn
    Magnetic properties of interfaces
  • 75.47.Np
    Magnetotransport phenomena in metals and alloys
  • 61.66.Dk
    Crystal structure of specific alloys
  • YEAR: 2009

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (23)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. T. Linn and D. Mauri, US Patent No. 6841395 (January 11, 2005).
  2. S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Samant, and S. -H. Yang, Nature Mater. 3, 862 (2004).
  3. S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, and K. Ando, Nature Mater. 3, 868 (2004).
  4. W. H. Butler, X. -G. Zhang, T. C. Schulthess, and J. M. MacLaren, Phys. Rev. B 63, 054416 (2001).
  5. J. Mathon and A. Umerski, Phys. Rev. B 63, 220403(R) (2001).
  6. S. Yuasa, Y. Suzuki, T. Katayama, and K. Ando, Appl. Phys. Lett. 87, 242503 (2005).
  7. J. C. Read, P. G. Mather, and R. A. Buhrman, Appl. Phys. Lett. 90, 132503 (2007).
  8. J. J. Cha, J. C. Read, R. A. Buhrman, and D. A. Muller, Appl. Phys. Lett. 91, 062516 (2007).
  9. The barrier composition is Mg0.38B0.05O0.57 and the cation ratio is B/(Mg+B)=0.05/(0.05+0.38)~0.12, J. J. Cha, J. C. Read, R. A. Buhrman, and D. A. Muller (unpublished).
  10. R. S. Dave, G. Steiner, J. M. Slaughter, J. J. Sun, B. Craigo, S. Pietambaram, K. Smith, G. Grynkewich, M. DeHerrera, J. Akerman and S. Tehrani, IEEE Trans. Magn. 42, 1935 (2006).
  11. R. M. Bozorth, Ferromagnetism (IEEE, Piscataway, NJ, 1951).
  12. P. M. Braganca, I. N. Krivorotov, O. Ozatay, A. G. F. Garcia, N. C. Emley, J. C. Sankey, D. C. Ralph, and R. A. Buhrman, Appl. Phys. Lett. 87, 112507 (2005).
  13. J. Z. Sun and D. C. Ralph, J. Magn. Magn. Mater. 320, 1227 (2008).
  14. D. Mazumdar, W. Shen, X. Liu, B. D. Schrag, M. Carter, and G. Xiao, J. Appl. Phys. 103, 113911 (2008).
  15. J. C. Sankey, Y. -T. Cui, J. Z. Sun, J. C. Slonczewski, R. A. Buhrman, and D. C. Ralph, Nat. Phys. 4, 67 (2008).
  16. D. C. Worledge and P. L. Trouilloud, Appl. Phys. Lett. 83, 84 (2003).
  17. M. Julliere, Phys. Lett. 54A, 225 (1975).
  18. S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. M. Lee, K. Miura, H. Hasegawa, M. Tsunoda, F. Matsukura, and H. Ohno, Appl. Phys. Lett. 93, 082508 (2008).
  19. P. G. Mather, J. C. Read, and R. A. Buhrman, Phys. Rev. B 73, 205412 (2006).
  20. C. D. Graham, Jr., and T. Egami, Annu. Rev. Mater. Sci. 8, 423 (1978).
  21. S. Tegen, I. Mönch, J. Schumann, H. Vinzelberg, and C. M. Schneider, J. Appl. Phys. 89, 8169 (2001).
  22. L. Néel, C. R. Acad. Sci 255, 1545 (1962).
  23. T. Katayama, S. Yuasa, J. Velev, M. Y. Zhuravlev, S. S. Jaswal, and E. Y. Tsymbal, Appl. Phys. Lett. 89, 112503 (2006).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics