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Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni0.95Pt0.05/Si(100) thin films

Appl. Phys. Lett. 94, 113103 (2009); doi:10.1063/1.3099970

Published 16 March 2009

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Praneet Adusumilli,1 Lincoln J. Lauhon,1 David N. Seidman,1 Conal E. Murray,2 Ori Avayu,3 and Yossi Rosenwaks3
1Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208-3108, USA
2IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA
3School of Electrical Engineering, Tel-Aviv University, Tel-Aviv 69978, Israel
Atom-probe tomography was utilized to study the distribution of Pt after silicidation of a solid-solution Ni0.95Pt0.05 thin film on Si(100). Direct evidence of Pt short-circuit diffusion via grain boundaries, Harrison's type-B regime, is found after silicidation to form (Ni0.99Pt0.01)Si. This underscores the importance of interfacial phenomena for stabilizing this low-resistivity phase, providing insights into the modification of NiSi texture, grain size, and morphology caused by Pt. Platinum segregates at the (Ni0.99Pt0.01)Si/Si(100) interface, which may be responsible for the increased resistance of (Ni0.99Pt0.01)Si to agglomeration. The relative shift in work function between as-deposited and annealed states is greater for Ni(Pt)Si than for NiSi. ©2009 American Institute of Physics
History: Received 19 January 2009; accepted 25 February 2009; published 16 March 2009
Permalink: http://link.aip.org/link/?APPLAB/94/113103/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.05.Hd
    Other semiconductors: fabrication, treatment, testing and analysis
  • 81.40.Ef
    Cold working, work hardening and annealing
  • 73.40.Ns
    Electrical properties of metal-nonmetal contacts
  • 73.30.+y
    Surface double layers, Schottky barriers, and work functions
  • 68.55.jm
    Thin film texture
  • 68.55.Ln
    Thin film defects and impurities
  • 68.35.Fx
    Diffusion; interface formation (solid surfaces)
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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