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Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions

Appl. Phys. Lett. 94, 121902 (2009); doi:10.1063/1.3104857

Published 23 March 2009

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C. Bayram, N. Péré-laperne, R. McClintock, B. Fain, and M. Razeghi
Department of Electrical Engineering and Computer Science, Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208, USA
A pulsed metal-organic chemical vapor deposition technique is developed for the growth of high-quality AlN/GaN superlattices (SLs) with intersubband (ISB) transitions at optical communications wavelengths. Tunability of the AlN and GaN layers is demonstrated. Indium is shown to improve SL surface and structural quality. Capping thickness is shown to be crucial for ISB transition characteristics. Effects of barrier- and well-doping on the ISB absorption are reported. ©2009 American Institute of Physics
History: Received 13 January 2009; accepted 4 March 2009; published 23 March 2009
Permalink: http://link.aip.org/link/?APPLAB/94/121902/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.15.Gh
    Chemical vapor deposition
  • 81.15.Kk
    Vapor phase epitaxy; growth from vapor phase
  • 68.65.Cd
    Superlattices (structure and nonelectronic properties)
  • 42.79.Sz
    Optical communication systems, multiplexers, and demultiplexers
  • YEAR: 2009

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ISSN:
0003-6951 (print)   1077-3118 (online)
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