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Metal-oxide-semiconductor capacitors with erbium oxide dielectrics on In0.53Ga0.47As channels

Appl. Phys. Lett. 94, 122907 (2009); doi:10.1063/1.3106618

Published 26 March 2009

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Yoontae Hwang,1 Mark A. Wistey,1,2 Joël Cagnon,1 Roman Engel-Herbert,1 and Susanne Stemmer1
1Materials Department, University of California, Santa Barbara, California 93120-5050, USA
2Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93120, USA
Erbium oxide dielectrics with a thickness of ~6  nm were fabricated in situ on In0.53Ga0.47As channels. Leakage current and capacitance densities were characterized as a function of applied voltage using metal-oxide-semiconductor capacitors with two different top electrode materials, Pt and Al. Leakage current densities were less than 10−3  A/cm2 at gate voltages up to ±2 V. The capacitance densities were lower with the Al electrode, which was attributed to a low-permittivity aluminum oxide layer at the electrode interface. The capacitors with the Pt electrode showed a pronounced increase in the capacitance in the depletion region at frequencies as high as 1 MHz, which was not observed for the Al electrode. Possible origins of the differences in the capacitance-voltage characteristics with Pt and Al electrodes are discussed. ©2009 American Institute of Physics
History: Received 25 November 2008; accepted 4 March 2009; published 26 March 2009
Permalink: http://link.aip.org/link/?APPLAB/94/122907/1
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KEYWORDS and PACS

Keywords
PACS
  • 84.32.Tt
    Capacitors
  • 73.40.Qv
    Electrical properties of metal-insulator-semiconductor structures
  • 77.55.+f
    Dielectric thin films
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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