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Growth of homoepitaxial SrTiO3 thin films by molecular-beam epitaxy

Appl. Phys. Lett. 94, 162905 (2009); doi:10.1063/1.3117365

Published 24 April 2009

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C. M. Brooks,1,2 L. Fitting Kourkoutis,3 T. Heeg,1 J. Schubert,4 D. A. Muller,3 and D. G. Schlom1
1Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA
2Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA
3School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
4Institute of Bio- and Nanosystems, IBN-1, Forschungszentrum Jülich GmbH and Jülich-Aachen Research Alliance, JARA-FIT, Jülich 52425, Germany
We report the structural properties of homoepitaxial (100) SrTiO3 films grown by reactive molecular-beam epitaxy (MBE). The lattice spacing and x-ray diffraction (XRD) rocking curves of stoichiometric MBE-grown SrTiO3 films are indistinguishable from the underlying SrTiO3 substrates. Off-stoichiometry for both strontium-rich and strontium-poor compositions (i.e., Sr1+xTiO3+delta films with −0.2<x<0.2) results in lattice expansion with significant changes to the shuttered reflection high-energy electron diffraction oscillations, XRD, and film microstructure. The dependence of lattice spacing on nonstoichiometry is smaller for MBE-grown films than for homoepitaxial (100) Sr1+xTiO3+delta films prepared by pulsed-laser deposition or sputtering. ©2009 American Institute of Physics
History: Received 17 November 2008; accepted 23 March 2009; published 24 April 2009
Permalink: http://link.aip.org/link/?APPLAB/94/162905/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.jd
    Thin film thickness
  • 61.05.jh
    Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED) (condensed matter structure determination)
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (13)
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  1. T. Ohnishi, M. Lippmaa, and T. Yamamoto, Appl. Phys. Lett. 87, 241919 (2005).
  2. T. Ohnishi, K. Shibuya, T. Yamamoto, and M. Lippmaa, J. Appl. Phys. 103, 103703 (2008).
  3. E. J. Tarsa, E. A. Hachfeld, F. T. Quinlan, J. S. Speck, and M. Eddy, Appl. Phys. Lett. 68, 490 (1996).
  4. Y. S. Kim, D. J. Kim, T. H. Kim, T. W. Noh, J. S. Choi, B. H. Park, and J. -G. Yoon, Appl. Phys. Lett. 91, 042908 (2007).
  5. D. Fuchs, M. Adam, P. Schweiss, S. Gerhold, S. Schuppler, R. Schneider, and B. Obst, J. Appl. Phys. 88, 1844 (2000).
  6. T. Suzuki, Y. Nishi, and M. Fujimoto, Philos. Mag. A 80, 621 (2000).
  7. C. D. Theis and D. G. Schlom, J. Vac. Sci. Technol. A 14, 2677 (1996).
  8. J. H. Haeni, C. D. Theis, and D. G. Schlom, J. Electroceram. 4, 385 (2000).
  9. J. H. Haeni, C. D. Theis, D. G. Schlom, W. Tian, X. Q. Pan, H. Chang, I. Takeuchi, and X. D. Xiang, Appl. Phys. Lett. 78, 3292 (2001).
  10. Y. Horikoshi, M. Kawashima, and H. Yamaguchi, Jpn. J. Appl. Phys., Part 1 27, 169 (1988).
  11. G. Koster, B. L. Keopman, G. J. H. M. Rijnders, D. H. A. Blank, and H. Rogalla, Appl. Phys. Lett. 73, 2920 (1998).
  12. J. B. Nelson and D. P. Riley, Proc. Phys. Soc. London57, 160 (1945).
  13. S. N. Ruddlesden and P. Popper, Acta Crystallogr. 10, 538 (1957)
    14. 11, 54 (1958).

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