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Geometric effects on dislocation nucleation in strained electronics

Appl. Phys. Lett. 94, 171905 (2009); doi:10.1063/1.3126520

Published 27 April 2009

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T. L. Li,1 J. H. Lee,1 Y. F. Gao,1,2 G. M. Pharr,1,3 M. Huang,4 and T. Y. Tsui5
1Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA
2Computer Science and Mathematics Division, Oak Ridge National Lab, Oak Ridge, Tennessee 37831, USA
3Materials Science and Technology Division, Oak Ridge National Lab, Oak Ridge, Tennessee 37831, USA
4Energy and Propulsion Technologies, GE Global Research Center, Niskayuna, New York 12309, USA
5Department of Chemical Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
Dislocation loops may be nucleated from sharp geometric features in strained micro- and nano-electronic devices. This process is investigated by a dissipative cohesive interface model which treats the dislocation core as a continuous, inhomogeneous lattice slip field. As a representative example, we calculate the critical external stress for dislocation nucleation from the edges/corners of a rectangular stress-free Si3N4 pad on a Si substrate as a function of geometric parameters such as the length-to-height ratio and the three-dimensional shape of the pad. The shapes of the dislocations are also simulated. ©2009 American Institute of Physics
History: Received 6 March 2009; accepted 26 March 2009; published 27 April 2009
Permalink: http://link.aip.org/link/?APPLAB/94/171905/1
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KEYWORDS and PACS

Keywords
PACS
  • 61.72.Hh
    Indirect evidence of dislocations and other defects
  • 85.40.-e
    Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
  • 85.35.-p
    Nanoelectronic devices
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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