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Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate

Appl. Phys. Lett. 94, 223506 (2009); doi:10.1063/1.3148326

Published 2 June 2009

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Binh-Minh Nguyen,1 Darin Hoffman,1 Edward Kwei-wei Huang,1 Simeon Bogdanov,1 Pierre-Yves Delaunay,1 Manijeh Razeghi,1 and Meimei Z. Tidrow2
1Department of Electrical Engineering and Computer Science, Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208, USA
2Missile Defense Agency, 7100 Defense Pentagon, Washington, DC 20301, USA
We report the growth and characterization of type-II InAs/GaSb superlattice photodiodes grown on a GaAs substrate. Through a low nucleation temperature and a reduced growth rate, a smooth GaSb surface was obtained on the GaAs substrate with clear atomic steps and low roughness morphology. On the top of the GaSb buffer, a p+-i-n+ type-II InAs/GaSb superlattice photodiode was grown with a designed cutoff wavelength of 4  µm. The detector exhibited a differential resistance at zero bias (R0A) in excess of 1600  Omega cm2 and a quantum efficiency of 36.4% at 77 K, providing a specific detectivity of 6×1011  cmsqrt(Hz)/W and a background limited operating temperature of 100 K with a 300 K background. Uncooled detectors showed similar performance to those grown on GaSb substrates with a carrier lifetime of 110 ns and a detectivity of 6×108  cmsqrt(Hz)/W. ©2009 American Institute of Physics
History: Received 5 February 2009; accepted 12 May 2009; published 2 June 2009
Permalink: http://link.aip.org/link/?APPLAB/94/223506/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Gz
    Photodetectors
  • 07.57.Kp
    Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
  • 85.60.Dw
    Photodiodes; phototransistors; photoresistors
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (20)
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