Diagnostic of laser contrast using target reflectivity
Using three different laser systems, we demonstrate a convenient and simple plasma based diagnostic of the contrast of high-power short-pulse lasers. The technique is based on measuring the specular r...
Using three different laser systems, we demonstrate a convenient and simple plasma based diagnostic of the contrast of high-power short-pulse lasers. The technique is based on measuring the specular r...
4.3 GHz optical bandwidth light emitting transistor
Appl. Phys. Lett. 94, 241101 (2009); doi:10.1063/1.3153146
Published 15 June 2009
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We demonstrate a quantum-well base heterojunction bipolar light emitting transistor (HBLET) operating in the common collector configuration with a 3 dB optical response bandwidth f3 dB of 4.3 GHz. The HBLET has a current gain, 
(=|
IC/IB|) as high as 30, and can be operated as a three-port device to provide simultaneously an optical and electrical output with gain. The f3 dB of 4.3 GHz corresponds to an effective carrier recombination lifetime of 37 ps, and shows that “fast” spontaneous recombination can be harnessed for high-speed modulation.
©2009 American Institute of Physics
(=|IC/IB|) as high as 30, and can be operated as a three-port device to provide simultaneously an optical and electrical output with gain. The f3 dB of 4.3 GHz corresponds to an effective carrier recombination lifetime of 37 ps, and shows that “fast” spontaneous recombination can be harnessed for high-speed modulation.
©2009 American Institute of Physics
| History: | Received 29 January 2009; accepted 17 April 2009; published 15 June 2009 |
| Permalink: |
http://link.aip.org/link/?APPLAB/94/241101/1 |
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