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Observation of temperature-independent internal Er3+ relaxation efficiency in Si-rich SiO2 films

Appl. Phys. Lett. 94, 241115 (2009); doi:10.1063/1.3157135

Published 18 June 2009

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Oleksandr Savchyn,1 Ravi M. Todi,2 Kevin R. Coffey,2 and Pieter G. Kik1
1CREOL, The College of Optics and Photonics, University of Central Florida, 4000 Central Florida Blvd., Orlando, Florida 32816, USA
2Advanced Materials Processing and Analysis Center (AMPAC), University of Central Florida, 4000 Central Florida Blvd., Orlando, Florida 32816, USA
Time-dependent photoluminescence measurements of low-temperature-annealed Er-doped Si-rich SiO2 were conducted at sample temperatures 15–300 K. The erbium internal relaxation efficiency from the second (4I11/2) to the first (4I13/2) excited state upon luminescence-center-mediated Er3+ excitation is investigated. Despite the observation of temperature-dependent relaxation rates, the erbium internal relaxation efficiency is found to be remarkably temperature independent, which suggests that the internal relaxation efficiency is near unity. Internal relaxation is shown to account for 50%–55% of the 4I13/2 excitation events in the entire temperature range. These results demonstrate that high pump efficiency and stable operation of devices based on this material will be possible under varying thermal conditions. ©2009 American Institute of Physics
History: Received 20 February 2009; accepted 30 May 2009; published 18 June 2009
Permalink: http://link.aip.org/link/?APPLAB/94/241115/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.55.Hx
    Photoluminescence in solid inorganic materials
  • 78.66.Nk
    Optical properties of insulators (thin films)
  • 61.72.up
    Doping and impurity implantation in other materials
  • 81.40.Gh
    Other heat and thermomechanical treatments
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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