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Molecular beam epitaxy of SrTiO3 with a growth window

Appl. Phys. Lett. 95, 032906 (2009); doi:10.1063/1.3184767

Published 23 July 2009

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Bharat Jalan, Pouya Moetakef, and Susanne Stemmer
Materials Department, University of California, Santa Barbara, California 93106-5050, USA
Many complex oxides with only nonvolatile constituents do not have a wide growth window in conventional molecular beam epitaxy (MBE) approaches, which makes it difficult to obtain stoichiometric films. Here it is shown that a growth window in which the stoichiometry is self-regulating can be achieved for SrTiO3 films by using a hybrid MBE approach that uses a volatile metal-organic source for Ti, titanium tetra isopropoxide (TTIP). The growth window widens and shifts to higher TTIP/Sr flux ratios with increasing temperature, showing that it is related to the desorption of the volatile TTIP. We demonstrate stoichiometric, highly perfect, insulating SrTiO3 films. The approach can be adapted for the growth of other complex oxides that previously were believed to have no wide MBE growth window. ©2009 American Institute of Physics
History: Received 22 June 2009; accepted 29 June 2009; published 23 July 2009
Permalink: http://link.aip.org/link/?APPLAB/95/032906/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.aj
    Insulator thin film nucleation and growth
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • 68.43.Nr
    Desorption kinetics
  • 61.50.Nw
    Crystal stoichiometry
  • YEAR: 2009

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ISSN:
0003-6951 (print)   1077-3118 (online)
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