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Nanosecond switching in GeTe phase change memory cells

Appl. Phys. Lett. 95, 043108 (2009); doi:10.1063/1.3191670

Published 28 July 2009

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G. Bruns,1 P. Merkelbach,1 C. Schlockermann,1 M. Salinga,1 M. Wuttig,1 T. D. Happ,2 J. B. Philipp,3 and M. Kund3
1I. Physikalisches Institut (IA), RWTH Aachen University, 52056 Aachen, Germany
2Qimonda Dresden GmbH &. Co. OHG, Königsbrücker Strasse 180, 01099 Dresden, Germany
3Qimonda AG, Bibergerstr. 93, 82008 Unterhaching, Germany
The electrical switching behavior of GeTe-based phase change memory devices is characterized by time resolved experiments. SET pulses with a duration of less than 16 ns are shown to crystallize the material. Depending on the resistance of the RESET state, the minimum SET pulse duration can even be reduced down to 1 ns. This finding is attributed to the increasing impact of crystal growth upon decreasing switchable volume. Using GeTe or materials with similar crystal growth velocities, hence promises nonvolatile phase change memories with dynamic random access memorylike switching speeds. ©2009 American Institute of Physics
History: Received 4 February 2009; accepted 9 July 2009; published 28 July 2009
Permalink: http://link.aip.org/link/?APPLAB/95/043108/1
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KEYWORDS and PACS

Keywords
PACS
  • 84.30.Sk
    Pulse and digital circuits
  • YEAR: 2009

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ISSN:
0003-6951 (print)   1077-3118 (online)
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