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Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition

Appl. Phys. Lett. 95, 062908 (2009); doi:10.1063/1.3204465

Published 14 August 2009

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Roman Engel-Herbert, Yoontae Hwang, Joël Cagnon, and Susanne Stemmer
Materials Department, University of California, Santa Barbara, California 93106-5050, USA
Zirconium oxide films were grown by chemical beam deposition with zirconium tert-butoxide as the source on (2×4) reconstructed, n-type In0.53Ga0.47As surfaces obtained after As decapping. Optimized growth conditions yielded ZrO2/In0.53Ga0.47As interfaces that were free of second phases. Capacitance-voltage (CV) measurements with different top electrodes showed a frequency dispersion of less than 2% per decade in accumulation. The accumulation capacitance and horizontal position of the CV curve were independent of temperature, while the inversion capacitance was strongly temperature dependent. Flat band voltages correlated with the work function of the metal electrode. ©2009 American Institute of Physics
History: Received 13 April 2009; accepted 22 July 2009; published 14 August 2009
Permalink: http://link.aip.org/link/?APPLAB/95/062908/1
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KEYWORDS and PACS

Keywords
PACS
  • 84.32.Tt
    Capacitors
  • 82.45.Un
    Dielectric materials in electrochemistry
  • YEAR: 2009

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0003-6951 (print)   1077-3118 (online)
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