Nonuniform doping distribution along silicon nanowires measured by Kelvin probe force microscopy and scanning photocurrent microscopy
Appl. Phys. Lett. 95, 092105 (2009); doi:10.1063/1.3207887
Published 1 September 2009
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We use Kelvin probe force microscopy and scanning photocurrent microscopy to measure the doping distribution along single phosphorous-doped silicon nanowire grown by the vapor-liquid-solid method. A nonlinear potential drop along biased silicon nanowires is detected both by measuring the surface potential directly via Kelvin probe force microscopy and by integrating the photocurrent measured by scanning photocurrent microscopy. These variations in the potential and field are further analyzed to extract the longitudinal dopant distribution along an individual silicon nanowire. The results show a very good agreement between the two methods to quantitatively detect potential, field, and doping variations within doped silicon nanowires.
©2009 American Institute of Physics
| History: | Received 5 July 2009; accepted 27 July 2009; published 1 September 2009 |
| Permalink: |
http://link.aip.org/link/?APPLAB/95/092105/1 |
KEYWORDS and PACS
doping profiles,
elemental semiconductors,
nanotechnology,
nanowires,
phosphorus,
photoconductivity,
scanning probe microscopy,
semiconductor doping,
semiconductor growth,
silicon,
surface potential
- 61.72.uf
Doping and impurity implantation in germanium and silicon - 81.16.-c
Methods of nanofabrication and processing - 61.46.Km
Structure of nanowires and nanorods - 81.07.-b
Nanoscale materials and structures: fabrication and characterization - 72.40.+w
Photoconduction and photovoltaic effects - 73.63.Nm
Quantum wires (electronic transport) - 81.05.Cy
Elemental semiconductors: fabrication, treatment, testing and analysis - 68.65.La
Quantum wires patterned in quantum wells (structure and nonelectronic properties) - YEAR: 2009
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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