Microscale inverse acoustic band gap structure in aluminum nitride
This work presents the design and demonstration of a microscale inverse acoustic band gap (IABG) structure in aluminum nitride (AlN) with a frequency stop band for bulk acoustic waves in the very high...
This work presents the design and demonstration of a microscale inverse acoustic band gap (IABG) structure in aluminum nitride (AlN) with a frequency stop band for bulk acoustic waves in the very high...
Room temperature negative differential resistance of a monolayer molecular rotor device
An electrically driven molecular rotor device comprised of a monolayer of redox-active ligated copper compounds sandwiched between a gold electrode and a highly doped P+Si substrate was fabricated. Cu...
An electrically driven molecular rotor device comprised of a monolayer of redox-active ligated copper compounds sandwiched between a gold electrode and a highly doped P+Si substrate was fabricated. Cu...
Gain-length scaling in quantum dot/quantum well infrared photodetectors
Appl. Phys. Lett. 95, 093502 (2009); doi:10.1063/1.3222856
Published 2 September 2009
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The gain in quantum dot/quantum well infrared photodetectors is investigated. The scaling of the gain with device length has been analyzed, and the behavior agrees with the previously proposed model. We conclude that we understand the gain in the low bias region, but in the high field region, discrepancies remain. An extension of the gain model is presented to cover the very high electric field region. The high field data are compared to the extended model and discussed.
©2009 American Institute of Physics
| History: | Received 2 June 2009; accepted 11 August 2009; published 2 September 2009 |
| Permalink: |
http://link.aip.org/link/?APPLAB/95/093502/1 |
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