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Gain-length scaling in quantum dot/quantum well infrared photodetectors

Appl. Phys. Lett. 95, 093502 (2009); doi:10.1063/1.3222856

Published 2 September 2009

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T. Yamanaka, B. Movaghar, S. Tsao, S. Kuboya, A. Myzaferi, and M. Razeghi
Department of Electrical Engineering and Computer Science, Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208, USA
The gain in quantum dot/quantum well infrared photodetectors is investigated. The scaling of the gain with device length has been analyzed, and the behavior agrees with the previously proposed model. We conclude that we understand the gain in the low bias region, but in the high field region, discrepancies remain. An extension of the gain model is presented to cover the very high electric field region. The high field data are compared to the extended model and discussed. ©2009 American Institute of Physics
History: Received 2 June 2009; accepted 11 August 2009; published 2 September 2009
Permalink: http://link.aip.org/link/?APPLAB/95/093502/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Gz
    Photodetectors
  • 85.35.Be
    Quantum well devices
  • 07.57.Kp
    Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
  • YEAR: 2009

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (13)
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