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Tunability of intersubband absorption from 4.5 to 5.3  µm in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition

Appl. Phys. Lett. 95, 131109 (2009); doi:10.1063/1.3242027

Published 30 September 2009

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N. Péré-Laperne, C. Bayram, L. Nguyen-Thê, R. McClintock, and M. Razeghi
Department of Electrical Engineering and Computer Science, Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208, USA
Intersubband (ISB) absorption at wavelengths as long as 5.3  µm is realized in GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition. By employing low aluminum content Al0.2Ga0.8N barriers and varying the well width from 2.6 to 5.1 nm, ISB absorption has been tuned from 4.5 to 5.3  µm. Theoretical ISB absorption and interband emission models are developed and compared to the experimental results. The effects of band offsets and the piezoelectric fields on these superlattices are investigated. ©2009 American Institute of Physics
History: Received 10 August 2009; accepted 11 September 2009; published 30 September 2009
Permalink: http://link.aip.org/link/?APPLAB/95/131109/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.67.Pt
    Optical properties of multilayers and superlattices
  • 81.15.Gh
    Chemical vapor deposition
  • 77.65.-j
    Piezoelectricity and electromechanical effects
  • 78.30.Fs
    Infrared and Raman spectra in III-V and II-VI semiconductors
  • 78.55.Cr
    Photoluminescence in III-V semiconductors
  • 68.65.Cd
    Superlattices (structure and nonelectronic properties)
  • YEAR: 2009

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ISSN:
0003-6951 (print)   1077-3118 (online)
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