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Piezoresistive transduction in multilayer polycrystalline silicon resonators

Appl. Phys. Lett. 95, 133113 (2009); doi:10.1063/1.3241077

Published 1 October 2009

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J. D. Cross,1 B. R. Ilic,1 M. K. Zalalutdinov,2,3 W. Zhou,1 J. W. Baldwin,3 B. H. Houston,3 H. G. Craighead,1 and J. M. Parpia1
1Cornell University, Ithaca, New York 14853, USA
2Global Strategies Group, Crofton, Maryland 21114, USA
3Naval Research Laboratory, Washington, DC 20375, USA
We demonstrate piezoresistive transduction of mechanical motion from out-of-plane flexural micromechanical resonators made from stacked thin films. The resonators are fabricated from two highly doped polycrystalline silicon layers separated by an interlayer dielectric. We examine two interlayer materials: thermal silicon dioxide and stoichiometric silicon nitride. We show that via one-time dielectric breakdown, the film stack functions as a vertical piezoresistor effectively transducing the motion of the resonators. We obtain a gauge factor of ~5, which is sufficient to detect the resonator motion. The simple film stack constitutes a vertically oriented piezoresistor that is readily integrated with micro- and nanoscale resonators. ©2009 American Institute of Physics
History: Received 11 June 2009; accepted 9 September 2009; published 1 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/133113/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.50.-n
    Dielectric, ferroelectric, and piezoelectric devices
  • 07.10.Cm
    Micromechanical devices and systems
  • 85.85.+j
    Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
  • 84.32.Ff
    Conductors, resistors
  • 77.22.Jp
    Dielectric breakdown and space-charge effects
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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