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Stoichiometry optimization of homoepitaxial oxide thin films using x-ray diffraction

Appl. Phys. Lett. 95, 142905 (2009); doi:10.1063/1.3243696

Published 6 October 2009

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James M. LeBeau,1 Roman Engel-Herbert,1 Bharat Jalan,1 Joël Cagnon,1 Pouya Moetakef,1 Susanne Stemmer,1 and G. Brian Stephenson2
1Materials Department, University of California, Santa Barbara, California 93106-5050, USA
2Materials Science Division and Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA
Homoepitaxial SrTiO3 thin films grown by molecular beam epitaxy are analyzed using high-resolution x-ray diffraction and transmission electron microscopy. Measured 00L x-ray scans from stoichiometric and nonstoichiometric films are compared with calculations that account for the effects of film thickness, lattice parameter, fractional site occupancy, and an offset between film and substrate at the interface. It is found that thickness fringes, commonly observed around Bragg reflections even in stoichiometric homoepitaxial SrTiO3 films, arise from a film/substrate interface offset. Transmission electron microscopy studies confirm the presence of strain at those homoepitaxial interfaces that show an offset in x-ray diffraction. The consequences for stoichiometry optimization of homoepitaxial films using high-resolution x-ray diffraction and the quality of regrown oxide interfaces are discussed. ©2009 American Institute of Physics
History: Received 12 August 2009; accepted 15 September 2009; published 6 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/142905/1
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KEYWORDS and PACS

Keywords
PACS
  • 61.50.Nw
    Crystal stoichiometry
  • 68.55.-a
    Thin film structure and morphology
  • 61.66.Fn
    Crystal structure of specific inorganic compounds
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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