Nonlinear laser-driven electron resonance acceleration in an inhomogeneous magnetic field
Electron resonance acceleration by an intense laser pulse in an inhomogeneous external magnetic field is investigated. The acceleration mechanism makes use of electron cyclotron resonance to increase ...
Electron resonance acceleration by an intense laser pulse in an inhomogeneous external magnetic field is investigated. The acceleration mechanism makes use of electron cyclotron resonance to increase ...
Ultraviolet and solar-blind spectral imaging with subwavelength transmission gratings
Aluminum gratings with subwavelength slit widths were designed and analyzed for spectral filtering of ultraviolet (UV) light. Although schemes for optical wavelength filtering have been thoroughly stu...
Aluminum gratings with subwavelength slit widths were designed and analyzed for spectral filtering of ultraviolet (UV) light. Although schemes for optical wavelength filtering have been thoroughly stu...
Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si
Appl. Phys. Lett. 95, 161106 (2009); doi:10.1063/1.3254181
Published 22 October 2009
You are not logged in to this journal. Log in
We demonstrate the effect of uniaxial tensile and compressive strain in Ge p-i-n photodiode integrated on Si using four-point bending structures. Responsivity at 1550 nm is increased from 0.67 to 0.75 A/W by tensile strain in the 
110
direction while for compressive strain it decreases from 0.67 to 0.477 A/W. These uniaxial tensile and compressive strains also effectively result in shifts of the absorption spectra toward longer and shorter wavelength as they reduce or increase the direct bandgap energy of the Ge layer, respectively.
©2009 American Institute of Physics
110 direction while for compressive strain it decreases from 0.67 to 0.477 A/W. These uniaxial tensile and compressive strains also effectively result in shifts of the absorption spectra toward longer and shorter wavelength as they reduce or increase the direct bandgap energy of the Ge layer, respectively.
©2009 American Institute of Physics
| History: | Received 26 June 2009; accepted 2 October 2009; published 22 October 2009 |
| Permalink: |
http://link.aip.org/link/?APPLAB/95/161106/1 |
| BUY THIS ARTICLE | (US$24) |
|
|
|
|
Connotea
CiteULike
del.icio.us
BibSonomy
REFERENCES (11)
For access to fully linked references, you need to log in.
For access to fully linked references, you need to Log in.
- L. Colace, G. Masini, and G. Assanto,
IEEE J. Quantum Electron. 35, 1843 (1999) . - S. V. Kartalopoulos,
IEEE Circuits Devices Mag. 18, 8 (2002) . - E. Yablonovitch and E. O. Kane,
J. Lightwave Technol. LT-4, 504 (1984) . - H. R. Philipp, W. C. Dash, and H. Ehrenreich,
Phys. Rev. 127, 762 (1960) . - Y. Ishikawa, K. Wada, D. D. Cannon, J. Liu, H. Luan, and L. C. Kimerling, Appl. Phys. Lett. 82, 2044 (2003).
- J. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, and L. C. Kimerling, Appl. Phys. Lett. 87, 103501 (2005).
- A. K. Okyay, A. Nayfeh, T. Yonehara, A. Marshall, P. C. McIntyre, and K. C. Saraswat,
Opt. Lett. 31, 2565 (2006) . - J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, Appl. Phys. Lett. 87, 011110 (2005).
- M. Kobayashi, T. Irisawa, B. M. Kope, Y. Sun, K. Saraswat, H. -S. P. Wong, P. Pianetta, and Y. Nishi, Symposium VLSI Technology, Kyoto, June 2009, 76.
- T. Krishnamohan, D. Kim, T. V. Dinh, A. -T. Pham, B. Meinerzhagen, C. Jungemann, and K. C. Saraswat, Tech. Dig. - Int. Electron Devices Meet. 2008, 899.
- D. Kim, T. Krishnamohan, L. Smith, H. -S. P. Wong, and K. C. Saraswat, IEEE Device Research Conference, South Bend, IN (IEEE, New York, 2007), p. 57.
