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Influence of nanocrystal size on dielectric functions of Si nanocrystals embedded in SiO2 matrix

Appl. Phys. Lett. 95, 161109 (2009); doi:10.1063/1.3254183

Published 23 October 2009

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Rong-Jun Zhang, Yi-Ming Chen, Wei-Jie Lu, Qing-Yuan Cai, Yu-Xiang Zheng, and Liang-Yao Chen
Department of Optical Science and Engineering, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
The complex dielectric functions of Si-nanocrystals (nc-Si) with different sizes embedded in SiO2 matrix synthesized by SiOx/SiO2 superlattice approach is obtained by spectroscopic ellipsometry. The Maxwell–Garnett effective medium approximation and the Lorentz oscillator model are employed in the spectra fitting. The dependence of the dielectric functions on the nc-Si size is observed. A significant suppression in amplitude of the dielectric functions with respect to bulk crystalline silicon, and a large influence of the nc-Si size on the E1 and E2 critical points are observed and discussed. ©2009 American Institute of Physics
History: Received 16 February 2009; accepted 3 October 2009; published 23 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/161109/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.07.Bc
    Nanocrystalline materials: fabrication and characterization
  • 61.46.Df
    Structure of nanocrystals and nanoparticles
  • 81.05.Cy
    Elemental semiconductors: fabrication, treatment, testing and analysis
  • 71.45.Gm
    Exchange, correlation, dielectric and magnetic response functions, plasmons
  • 81.16.-c
    Methods of nanofabrication and processing
  • 77.22.Ch
    Permittivity (dielectric function)
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (26)
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  1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
  2. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, and F. Priolo, Nature (London) 408, 440 (2000).
  3. J. Heitmann, F. Müller, L. X. Yi, M. Zacharias, D. Kovalev, and F. Eichhorn, Phys. Rev. B 69, 195309 (2004).
  4. R. J. Zhang, S. Y. Seo, A. P. Milenin, M. Zacharias, and U. Gösele, Appl. Phys. Lett. 88, 153120 (2006).
  5. F. Iacona, G. Franzò, E. C. Moreira, and F. Priolo, J. Appl. Phys. 89, 8354 (2001).
  6. E. A. Boer, M. L. Brongersma, H. A. Atwater, R. C. Flagan, and L. D. Bell, Appl. Phys. Lett. 79, 791 (2001).
  7. E. Kapetanakis, P. Normand, D. Tsoukalas, K. Beltsios, J. Stoemenos, S. Zhang, and J. Van den Berg, Appl. Phys. Lett. 77, 3450 (2000).
  8. H. -Ch. Weissker, J. Furthmüller, and F. Bechstedt, Phys. Rev. B 65, 155327 (2002).
  9. H. -Ch. Weissker, J. Furthmüller, and F. Bechstedt, Phys. Rev. B 67, 165322 (2003).
  10. L. Ding, T. P. Chen, Y. Liu, C. Y. Ng, and S. Fung, Phys. Rev. B 72, 125419 (2005).
  11. L. Ding, T. P. Chen, Y. Liu, M. Yang, J. I. Wong, Y. C. Liu, A. D. Trigg, F. R. Zhu, M. C. Tan, and S. Fung, J. Appl. Phys. 101, 103525 (2007).
  12. S. Guha, M. D. Pace, D. N. Dunn, and I. L. Singer, Appl. Phys. Lett. 70, 1207 (1997).
  13. T. P. Chen, Y. Liu, M. S. Tse, P. F. Ho, G. Dong, and S. Fung, Appl. Phys. Lett. 81, 4724 (2002).
  14. M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, and J. Bläsing, Appl. Phys. Lett. 80, 661 (2002).
  15. L. Y. Chen, X. W. Feng, Y. Su, H. Z. Ma, and Y. H. Qian, Appl. Opt. 33, 1299 (1994).
  16. R. M. Azzam and N. M. Basharra, Ellipsometry and Polarized Light (North-Holland, Amsterdam, 1997).
  17. H. G. Tompkins and E. A. Irene, Handbook of Spectroscopic Ellipsometry (William Andrew, Norwich, 2005).
  18. H. G. Yoo and P. M. Fauchet, Phys. Rev. B 77, 115355 (2008).
  19. L. -W. Wang and A. Zunger, Phys. Rev. Lett. 73, 1039 (1994).
  20. F. Giustino and A. Pasquarello, Phys. Rev. B 71, 144104 (2005).
  21. C. Delerue, M. Lannoo, and G. Allan, Phys. Rev. B 68, 115411 (2003).
  22. X. Cartoixa and L. W. Wang, Phys. Rev. Lett. 94, 236804 (2005).
  23. C. Delerue and G. Allan, Appl. Phys. Lett. 88, 173117 (2006).
  24. A. Zimina, S. Eisebitt, W. Eberhardt, J. Heitmann, and M. Zacharias, Appl. Phys. Lett. 88, 163103 (2006).
  25. J. A. Moreno, B. Garrido, P. Pellegrino, C. Garcia, J. Arbiol, J. R. Morante, P. Marie, F. Gourbilleau, and R. Rizk, J. Appl. Phys. 98, 013523 (2005).
  26. M. Zacharias, L. Yi, J. Heitmann, R. Scholz, M. Reiche, and U. Goesele, Solid State Phenom. 94, 95 (2003).

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