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Efficient hole transport in asymmetric coupled InGaN multiple quantum wells

Appl. Phys. Lett. 95, 161110 (2009); doi:10.1063/1.3254232

Published 23 October 2009

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Jiang-Yong Zhang,1,2 Li-E Cai,2 Bao-Ping Zhang,2,3 Xiao-Long Hu,2 Fang Jiang,2 Jin-Zhong Yu,1,2 and Qi-Ming Wang1,2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
2Laboratory of Micro/Nano Optoelectronics, Department of Physics and Semiconductor Photonics Research Center, Xiamen University, Xiamen, Fujian 361005, People's Republic of China
3Pen-Tung Sah Micro/Nano Technology Research Center, Xiamen University, Xiamen, Fujian 361005, People's Republic of China
InGaN based light emitting devices (LEDs) with asymmetric coupled quantum wells (AS-QWs) and conventional symmetric coupled quantum wells (CS-QWs) active structures were grown by metal-organic chemical vapor deposition technique. The LEDs with AS-QWs active region show improved light emission intensity and reduced forward voltage compared with LEDs with CS-QWs active region. Based on the electroluminescence measurements and the devices structure analysis, it can be concluded that these improvements are mainly attributed to the efficient hole tunneling through barriers and consequently the uniform distribution of carriers in the AS-QWs. ©2009 American Institute of Physics
History: Received 27 July 2009; accepted 2 October 2009; published 23 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/161110/1
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