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Thermal contact resistance between graphene and silicon dioxide

Appl. Phys. Lett. 95, 161910 (2009); doi:10.1063/1.3245315

Published 23 October 2009

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Z. Chen,1 W. Jang,1 W. Bao,2 C. N. Lau,2 and C. Dames1
1Department of Mechanical Engineering, University of California, Riverside, California 92521, USA
2Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
The thermal contact resistance between graphene and silicon dioxide was measured using a differential 3omega method. The sample thicknesses were 1.2 (single-layer graphene), 1.5, 2.8, and 3.0 nm, as determined by atomic force microscopy. All samples exhibited approximately the same temperature trend from 42 to 310 K, with no clear thickness dependence. The contact resistance at room temperature ranges from 5.6×10−9 to 1.2×10−8  m2 K/W, which is significantly lower than previous measurements involving related carbon materials. These results underscore graphene's potential for applications in microelectronics and thermal management structures. ©2009 American Institute of Physics
History: Received 19 August 2009; accepted 18 September 2009; published 23 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/161910/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.40.Cg
    Contact resistance, contact potential
  • 61.48.De
    Structure of carbon nanotubes, boron nanotubes and closely related graphite-like systems
  • YEAR: 2009

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0003-6951 (print)   1077-3118 (online)
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