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Correlating dopant distributions and electrical properties of boron-doped silicon nanowires

Appl. Phys. Lett. 95, 162101 (2009); doi:10.1063/1.3250431

Published 19 October 2009

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Ruth A. Schlitz, Daniel E. Perea, Jessica L. Lensch-Falk, Eric R. Hemesath, and Lincoln J. Lauhon
Department of Materials Science and Engineering, Northwestern University, 2220 Campus Dr., Evanston, Illinois 60208, USA
Quantitative nonuniform radial doping profiles in vapor liquid solid grown boron-doped silicon nanowires are correlated with axial variations in electrical properties. Boron concentrations measured by atom probe tomography are lower for the core material grown from a gold catalyst than for material deposited on the nanowire surface. Transistors fabricated along a single nanowire exhibit a transition from nonlinear contact-dominated behavior to linear behavior with increasing thickness of the dopant-enriched surface layer. Simple models confirm that the surface is doped to a level that enables the contact resistance to become comparable to the channel resistance, suggesting that unintentional surface doping may play a role in lowering contact resistances in some nanowire devices. ©2009 American Institute of Physics
History: Received 22 April 2009; accepted 23 September 2009; published 19 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/162101/1
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Supplemental Material

KEYWORDS and PACS

Keywords
PACS
  • 61.72.uf
    Doping and impurity implantation in germanium and silicon
  • 85.30.Tv
    Semiconductor field effect devices
  • 85.35.-p
    Nanoelectronic devices
  • 73.63.-b
    Electronic transport in nanoscale materials and structures
  • 81.16.-c
    Methods of nanofabrication and processing
  • 73.40.Cg
    Contact resistance, contact potential
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

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