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Influence of GeSi interfacial layer on Ge–Ge optical phonon mode in SiO2 films embedded with Ge nanocrystals

Appl. Phys. Lett. 95, 171105 (2009); doi:10.1063/1.3257379

Published 28 October 2009

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L. Z. Liu,1 F. Gao,1 X. L. Wu,1,2 T. H. Li,1 and Paul K. Chu2
1Department of Physics and Nanjing National Laboratory of Microstructure, Nanjing University, Nanjing 210093, People's Republic of China
2Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
The Ge–Ge optical phonon peak at 300  cm−1 acquired from amorphous SiO2 films embedded with Ge nanocrystals by Raman scattering is sensitive to the Si content. When the Si concentration is high, a thin GeSi interfacial layer forms around the Ge nanocrystals. A tensile stress is produced to partially offset the compressive stress imposed by the SiO2 matrix on the Ge nanocrystals, consequently downshifting the frequency of the optical phonon and increasing its linewidth. Theoretical calculation based on phonon confinement and compressive effects discloses that the interfacial layer plays a crucial role in the optical phonon behavior. ©2009 American Institute of Physics
History: Received 16 September 2009; accepted 9 October 2009; published 28 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/171105/1
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KEYWORDS and PACS

Keywords
PACS
  • 63.22.Kn
    Phonons and vibrational states in clusters and nanocrystals
  • 63.20.D-
    Phonon states and bands, normal modes and phonon dispersion
  • 78.67.Bf
    Optical properties of nanocrystals and nanoparticles
  • 62.20.F-
    Deformation and plasticity of solids
  • 81.40.Lm
    Deformation, plasticity, and creep
  • 62.25.-g
    Mechanical properties of nanoscale systems
  • 78.30.Am
    Infrared and Raman spectra in elemental semiconductors and insulators
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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