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Cavity-enhanced photocurrent generation by 1.55  µm wavelengths linear absorption in a p-i-n diode embedded silicon microring resonator
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All-optical phase modulations in a silicon wire waveguide at ultralow light levels

Appl. Phys. Lett. 95, 171110 (2009); doi:10.1063/1.3257378

Published 30 October 2009

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Nobuyuki Matsuda (松田信幸),1 Ryosuke Shimizu (清水亮介),2 Yasuyoshi Mitsumori (三森康義),1 Hideo Kosaka (小坂英男),1 Aya Sato (佐藤綾耶),3 Hiroyuki Yokoyama (横山弘之),3 Koji Yamada (山田浩治),4 Toshifumi Watanabe (渡辺俊文),4 Tai Tsuchizawa (土澤泰),4 Hiroshi Fukuda (福田浩),4 Seiichi Itabashi (板橋聖一),4 and Keiichi Edamatsu (枝松圭一)1
1Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
2PRESTO, Japan Science and Technology Agency, Saitama 332-0012, Japan
3New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
4NTT Microsystem Integration Laboratories, NTT Corporation, Kanagawa 243-0198, Japan
Cross-phase modulation (XPM) in a silicon wire waveguide at 1.55  µm telecom band was studied down to ultralow light levels. In the low-power regime, we found that free-carrier dispersion as well as the optical Kerr effect contributes to the XPM. Possible mechanisms of the low-power XPM are discussed. ©2009 American Institute of Physics
History: Received 1 September 2009; accepted 8 October 2009; published 30 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/171110/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.60.Fc
    Laser beam modulation, tuning, and mode locking
  • 42.79.Hp
    Optical processors, correlators, and modulators
  • 42.65.Hw
    Phase conjugation; photorefractive and Kerr effects
  • YEAR: 2009

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ISSN:
0003-6951 (print)   1077-3118 (online)
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