All-optical phase modulations in a silicon wire waveguide at ultralow light levels
Cross-phase modulation (XPM) in a silicon wire waveguide at 1.55 µm telecom band was studied down to ultralow light levels. In the low-power regime, we found that free-carrier dispers...
Cross-phase modulation (XPM) in a silicon wire waveguide at 1.55 µm telecom band was studied down to ultralow light levels. In the low-power regime, we found that free-carrier dispers...
Plasmonic waveguide as an efficient transducer for high-density data storage
A design of high optical throughput nanoscale light sources has been proposed based on plasmonic wedge waveguides. It provides localization of the 1500 nm wavelength light at the output of less than 3...
A design of high optical throughput nanoscale light sources has been proposed based on plasmonic wedge waveguides. It provides localization of the 1500 nm wavelength light at the output of less than 3...
Cavity-enhanced photocurrent generation by 1.55 µm wavelengths linear absorption in a p-i-n diode embedded silicon microring resonator
Appl. Phys. Lett. 95, 171111 (2009); doi:10.1063/1.3257384
Published 30 October 2009
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We demonstrate 20-fold cavity-enhanced photocurrent generation in 1.55 µm wavelengths in a p-i-n diode embedded silicon microring resonator with Q factor of 8000. The on-resonance wavelength shows linear responsivity of 0.12 mA/W upon 0 V bias and 0.25 mA/W upon −15 V bias. We attribute the linear absorption to surface-state absorption at the microring waveguide interfaces. Our experiments indicate that the photocurrent generation is linear to the estimated coupled power up to ~500 µW.
©2009 American Institute of Physics
| History: | Received 21 August 2009; accepted 9 October 2009; published 30 October 2009 |
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