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Mg doping and its effect on the semipolar GaN(11[overline 2]2) growth kinetics

Appl. Phys. Lett. 95, 171908 (2009); doi:10.1063/1.3256189

Published 29 October 2009

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L. Lahourcade,1 J. Pernot,2 A. Wirthmüller,1 M. P. Chauvat,3 P. Ruterana,3 A. Laufer,4 M. Eickhoff,4 and E. Monroy1
1Equipe mixte CEA-CNRS “Nanophysique et Semiconducteurs,” CEA-Grenoble, INAC/SP2M/NPSC, 17 rue des Martyrs, 38054 Grenoble, France
2Institut NEEL, CNRS and Université Joseph Fourier, BP166, 38042 Grenoble Cedex 9, France
3CIMAP, UMR6252, CNRS-ENSICAEN-CEA-UCBN, 6 Boulevard du Maréchal Juin, 14050 Caen, France
4I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, 35392 Giessen, Germany
We report the effect of Mg doping on the growth kinetics of semipolar GaN(11[overline 2]2) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(11[overline 2]2). We observe an enhancement of Mg incorporation in GaN(11[overline 2]2) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study. ©2009 American Institute of Physics
History: Received 21 August 2009; accepted 7 October 2009; published 29 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/171908/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.ag
    Semiconductor thin film nucleation and growth
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • 68.35.Dv
    Composition, segregation; defects and impurities (solid surfaces/interfaces)
  • 61.72.uj
    Doping and impurity implantation in III-V and II-VI semiconductors
  • YEAR: 2009

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (18)
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  16. There is a large dispersion in the values of m<sub>h</sub><sup>*</sup> in the literature, most of them ranging between m<sub>h</sub><sup>*</sup>=1.0m0 and m<sub>h</sub><sup>*</sup>=2.2m0. This parameter affects mostly the result in terms of acceptor concentration. Thus, a choice of m<sub>h</sub><sup>*</sup>=1.0m0 lead us to a value of NA=1×1020  cm−3, which is inconsistent with our SIMS measurements. We have therefore used the relatively high value, m<sub>h</sub><sup>*</sup>=2.2m0, which provides a better description of our electrical and structural data, in agreement with previous results by Kozodoy et al. (Ref. 17).
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