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Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations

Appl. Phys. Lett. 95, 172103 (2009); doi:10.1063/1.3257363

Published 27 October 2009

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Shengqiang Zhou (周生强), Danilo Bürger, Manfred Helm, and Heidemarie Schmidt
Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany
Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect (AHE). Usually, the reported AHE (1) is observable at temperatures above 10 K, (2) exhibits no hysteresis, and (3) changes the sign of slope. We observed a similar Hall resistance in Mn implanted Ge with the Mn concentration as low as 0.004%. We show that the puzzling AHE features can be explained by considering a two-band-like conduction in Ge:Mn. ©2009 American Institute of Physics
History: Received 15 September 2009; accepted 9 October 2009; published 27 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/172103/1
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KEYWORDS and PACS

Keywords
PACS
  • 72.20.My
    Galvanomagnetic and other magnetotransport effects (semiconductors/insulators)
  • 72.80.Cw
    Electrical conductivity of elemental semiconductors
  • 61.72.uf
    Doping and impurity implantation in germanium and silicon
  • 75.50.Pp
    Magnetic semiconductors
  • 75.50.Dd
    Nonmetallic ferromagnetic materials
  • YEAR: 2009

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ISSN:
0003-6951 (print)   1077-3118 (online)
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